1 - 4 ? 2000 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 1000 v v dgr t j = 25 c to 150 c; r gs = 1 m 1000 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c12a i dm t c = 25 c, 48 a pulse width limited by t jm i ar t c = 25 c12a e ar t c = 25 c30mj dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 5 v/ns t j 150 c, r g = 2 p d t c = 25 c 300 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.063 in) from case for 10 s 300 c m d mounting torque 1.13/10 nm/lb.in. weight to-247 ad 6 g to-268 4 g n-channel enhancement mode avalanche rated low q g , high dv/dt features ? ixys advanced low q g process low gate charge and capacitances - easier to drive - faster switching international standard packages low r ds (on) unclamped inductive switching (uis) rated molding epoxies meet ul 94 v-0 flammability classification advantages easy to mount space savings high power density symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 3 ma 1000 v v gs(th) v ds = v gs , i d = 4 ma 2.5 5.5 v i gss v gs = 20 v dc , v ds = 0 100 na i dss v ds = 0.8 v dss t j = 25 c 50 a v gs = 0 v t j = 125 c1ma r ds(on) v gs = 10 v, i d = 0.5 i d25 1.05 pulse test, t 300 s, duty cycle d 2 % 97539b (11/98) to-247 ad (ixfh) g = gate d = drain s = source tab = drain hiperfet tm power mosfets q class to-268 (d3) (ixft) (tab) g s preliminary data sheet v dss = 1000 v i d25 = 12 a r ds(on) = 1.05 t rr 200 ns ixfh 12n100q ixft 12n100q ixys reserves the right to change limits, test conditions, and dimensions.
2 - 4 ? 2000 ixys all rights reserved symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 15 v; i d = 0.5 i d25 , pulse test 4 10 s c iss 2900 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 315 pf c rss 50 pf t d(on) 20 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 23 ns t d(off) r g = 2 (external), 40 ns t f 15 ns q g(on) 90 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 30 nc q gd 40 nc r thjc 0.42 k/w r thck (to-247) 0.25 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 12 a i sm repetitive; pulse width limited by t jm 48 a v sd i f = i s , v gs = 0 v, 1.3 v pulse test, t 300 s, duty cycle d 2 % t rr 200 ns q rm i f = i s , -di/dt = 100 a/ s, v r = 100 v 0.6 c i rm 7a ixfh 12n100q ixft 12n100q to-247 ad (ixfh) outline dim. millimeter inches min. max. min. max. a 19.81 20.32 0.780 0.800 b 20.80 21.46 0.819 0.845 c 15.75 16.26 0.610 0.640 d 3.55 3.65 0.140 0.144 e 4.32 5.49 0.170 0.216 f 5.4 6.2 0.212 0.244 g 1.65 2.13 0.065 0.084 h - 4.5 - 0.177 j 1.0 1.4 0.040 0.055 k 10.8 11.0 0.426 0.433 l 4.7 5.3 0.185 0.209 m 0.4 0.8 0.016 0.031 n 1.5 2.49 0.087 0.102 dim. millimeter inches min. max. min. max. a 4.9 5.1 .193 .201 a 1 2.7 2.9 .106 .114 a 2 .02 .25 .001 .010 b 1.15 1.45 .045 .057 b 2 1.9 2.1 .75 .83 c .4 .65 .016 .026 d 13.80 14.00 .543 .551 e 15.85 16.05 .624 .632 e 1 13.3 13.6 .524 .535 e 5.45 bsc .215 bsc h 18.70 19.10 .736 .752 l 2.40 2.70 .094 .106 l1 1.20 1.40 .047 .055 l2 1.00 1.15 .039 .045 l3 0.25 bsc .010 bsc l4 3.80 4.10 .150 .161 to-268aa (d 3 pak) min. recommended footprint ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
3 - 4 ? 2000 ixys all rights reserved v gs - volts 34567 i d - amperes 0 2 4 6 8 10 12 t c - degrees c -50 -25 0 25 50 75 100 125 150 i d - amperes 0 4 8 12 16 t j - degrees c 25 50 75 100 125 150 r ds(on) - normalized 1.0 1.5 2.0 2.5 i d = 6a i d - amperes 048121620 r ds(on) - normalized 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 v ds - volts 0 6 12 18 24 30 i d - amperes 0 3 6 9 12 15 v ds - volts 0 4 8 12 16 20 i d - amperes 0 4 8 12 16 20 5v v gs = 10v v gs = 10v 9v 8v 7v t j = 125 o c v gs = 10v t j = 25 o c 6v 5v t j = 25 o c i d = 12a t j = 25 o c t j = 125 o c v gs = 10v 9v 8v 7v t j = 125 o c 6v figure 2. output characteristics at 125 o c figure 1. output characteristics at 25 o c figure 5. drain current vs. case temperature figure 6. admittance curves figure 3. r ds(on) normalized to value at i d = 12a figure 4. r ds(on) normalized to value at i d = 12a ixfh 12n100q ixft 12n100q
4 - 4 ? 2000 ixys all rights reserved v ds - volts 10 100 1000 i d - amperes 0. 1 1 10 100 pulse width - seconds 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 r(th) jc - k/w 0.001 0.01 0.1 1 v ds - volts 0 5 10 15 20 25 30 35 40 capacitance - pf 50 100 250 500 1000 2500 5000 gate charge - nc 0 20406080100 v gs - volts 0 2 4 6 8 10 12 crss coss ciss v ds = 500v i d = 6a f = 1mhz t c = 25 o c 10ms 1ms 100ms dc d=0.5 d=0.1 d=0.05 d=0.02 d=0.01 single pulse d = duty cycle 0.1ms d=0.2 v sd - volts 0.2 0.4 0.6 0.8 1.0 1.2 i d - amperes 0 5 10 15 20 25 30 t j = 125 o c t j = 25 o c figure 7. gate charge figure 9. source current vs. source to drain voltage figure 8. capacitance curves figure 11. transient thermal resistance figure 10. forward bias safe operating area ixfh 12n100q ixft 12n100q
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